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http://dspace.bits-pilani.ac.in:8080/jspui/handle/123456789/16619| Title: | AlN/β-Ga₂O₃ MOSHEMT as Biosensor |
| Authors: | Kumar, Rahul |
| Keywords: | EEE Ga₂O₃ High electron mobility transistor (HEMT) Biosensors Sensitivity Biomolecule |
| Issue Date: | 2024 |
| Publisher: | IEEE |
| Abstract: | Gallium Oxide (Ga 2 O 3 ), as an ultra-wide bandgap semiconductor, has shown great promise for power electronics. Due to its chemical and thermal stability and biocompatibility, it can be an excellent material for biosensing applications. In this pioneering work, we have explored the possibility of Ga 2 O 3 metal oxide semiconductor-high electron mobility transistor (MOSHEMT) for biosensing applications. We have tested neutral biomolecules on cavity-based MOSHEMT biosensors. Initial simulation results are promising enough to test the experimental viability of the Ga 2 O 3 field effect transistor (FET) as a biosensor. |
| URI: | https://ieeexplore.ieee.org/abstract/document/10465995 http://dspace.bits-pilani.ac.in:8080/jspui/handle/123456789/16619 |
| Appears in Collections: | Department of Electrical and Electronics Engineering |
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