AlN/β-Ga₂O₃ MOSHEMT as Biosensor

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DC Field	Value	Language
dc.contributor.author	Kumar, Rahul	-
dc.date.accessioned	2024-12-13T10:19:09Z	-
dc.date.available	2024-12-13T10:19:09Z	-
dc.date.issued	2024	-
dc.identifier.uri	https://ieeexplore.ieee.org/abstract/document/10465995	-
dc.identifier.uri	http://dspace.bits-pilani.ac.in:8080/jspui/handle/123456789/16619	-
dc.description.abstract	Gallium Oxide (Ga 2 O 3 ), as an ultra-wide bandgap semiconductor, has shown great promise for power electronics. Due to its chemical and thermal stability and biocompatibility, it can be an excellent material for biosensing applications. In this pioneering work, we have explored the possibility of Ga 2 O 3 metal oxide semiconductor-high electron mobility transistor (MOSHEMT) for biosensing applications. We have tested neutral biomolecules on cavity-based MOSHEMT biosensors. Initial simulation results are promising enough to test the experimental viability of the Ga 2 O 3 field effect transistor (FET) as a biosensor.	en_US
dc.language.iso	en	en_US
dc.publisher	IEEE	en_US
dc.subject	EEE	en_US
dc.subject	Ga₂O₃	en_US
dc.subject	High electron mobility transistor (HEMT)	en_US
dc.subject	Biosensors	en_US
dc.subject	Sensitivity	en_US
dc.subject	Biomolecule	en_US
dc.title	AlN/β-Ga₂O₃ MOSHEMT as Biosensor	en_US
dc.type	Article	en_US
Appears in Collections:	Department of Electrical and Electronics Engineering

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