Theoretical Investigation of Thickness Variation on Ga2O3 MESFET: Depletion to Enhancement Mode Transition

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DC Field	Value	Language
dc.contributor.author	Kumar, Rahul	-
dc.date.accessioned	2024-12-13T10:47:24Z	-
dc.date.available	2024-12-13T10:47:24Z	-
dc.date.issued	2023	-
dc.identifier.uri	https://ieeexplore.ieee.org/abstract/document/10127322	-
dc.identifier.uri	http://dspace.bits-pilani.ac.in:8080/jspui/handle/123456789/16622	-
dc.description.abstract	We have investigated the DC characteristics of Ga 2 O 3 -based metal semiconductor field effect transistor (MESFET). Different channel thicknesses namely 1000 nm, 500 nm, 250 nm and 100 nm have been employed for simulation. By reducing the channel thickness, depletion mode (D-mode) devices turned into enhancement mode (E-mode) devices. Peculiar exponential output characteristics have been observed in the subthreshold region.	en_US
dc.language.iso	en	en_US
dc.publisher	IEEE	en_US
dc.subject	EEE	en_US
dc.subject	MESFET	en_US
dc.subject	Gallium oxide (Ga2O3)	en_US
dc.subject	Depletion mode	en_US
dc.subject	Enhancement mode	en_US
dc.subject	Schottky	en_US
dc.title	Theoretical Investigation of Thickness Variation on Ga2O3 MESFET: Depletion to Enhancement Mode Transition	en_US
dc.type	Article	en_US
Appears in Collections:	Department of Electrical and Electronics Engineering

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