
Please use this identifier to cite or link to this item:
http://dspace.bits-pilani.ac.in:8080/jspui/handle/123456789/16625
Title: | Single crystalline Ge thin film growth on c-plane sapphire substrates by molecular beam epitaxy (MBE) |
Authors: | Kumar, Rahul |
Keywords: | EEE Molecular beam epitaxy (MBE) |
Issue Date: | Apr-2022 |
Publisher: | RSC |
Abstract: | Single crystalline Ge has been grown on c-plane sapphire substrates by molecular beam epitaxy. Direct growth of Ge on sapphire results in three-dimensional (3D) Ge islands, two growth directions, more than one primary domain, and twinned crystals. The introduction of a thin AlAs nucleation layer significantly improved the surface and material quality, which is evident from a smoother surface, single epitaxial orientation, sharper rocking curve, and a single domain. The AlAs nucleation layer thickness was also investigated, and a 10 nm AlAs layer resulted in the lowest surface roughness of 3.9 nm. We have been able to achieve a single primary domain and reduced twinning relative to previous works. A high-quality Ge buffer on sapphire has the potential as an effective platform for the subsequent growth of GeSn and SiGeSn for microwave photonics. |
URI: | https://pubs.rsc.org/en/content/articlehtml/2022/ce/d1ce01715b http://dspace.bits-pilani.ac.in:8080/jspui/handle/123456789/16625 |
Appears in Collections: | Department of Electrical and Electronics Engineering |
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.