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dc.contributor.authorNakamura, Y.-
dc.contributor.authorMatsumura, K.-
dc.contributor.authorShimoji, M.-
dc.date.accessioned2025-06-23T11:07:55Z-
dc.date.available2025-06-23T11:07:55Z-
dc.date.issued1974-
dc.identifier.urihttp://dspace.bits-pilani.ac.in:8080/jspui/handle/123456789/18970-
dc.description.abstractThe electrical conductivity and thermoelectric power of T12S have been measured as a'function of temperature. Non-stoichiometric and impurity doping effects have been investigated. The results for molten T12S containing excess metal atoms are discussed with relation to Mott’s theory for the strong scattering process.en_US
dc.language.isoenen_US
dc.publisherJournal of the Chemical Society : Faraday Transaction - I. The Chemical Society, London. 1974, 70 (1-6)en_US
dc.subjectChemistryen_US
dc.subjectElectrical Propertiesen_US
dc.subjectMolten T12Sen_US
dc.subjectJournal of the Chemical Society : Faraday Transaction - Ien_US
dc.titleElectrical Properties of Molten T12Sen_US
dc.typeArticleen_US
Appears in Collections:Journal Articles (before-1995)

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