Please use this identifier to cite or link to this item:
http://dspace.bits-pilani.ac.in:8080/jspui/xmlui/handle/123456789/1901| Title: | Temperature & field dependence of ionization rates and drift velocity of electrons in silicon |
| Authors: | Ahmad, S. |
| Keywords: | Physics Ionization Electrons Silicon Dielectric |
| Issue Date: | Nov-1969 |
| Publisher: | BITS Pilani |
| Description: | Supervisor: Dr. W.S. Khokle |
| URI: | http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/1901 |
| Appears in Collections: | Department of Physics |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| Temperature-&-field-dependence-of-ionization-rates-and-drift-velocity-of-eldctrons-in-silicon.pdf Restricted Access | 53.01 MB | Adobe PDF | View/Open Request a copy |
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