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Issue Date
Title
Author(s)
2008-08
Drain Current Model Including Velocity Saturation for Symmetric Double-Gate MOSFETs
Rao, V. Ramgopal
2008
Sub-20 nm gate length FinFET design: Can high-κ spacers make a difference?
Rao, V. Ramgopal
2008-06
Closed Form Current and Conductance Model for Symmetric Double-Gate MOSFETs using Field-dependent Mobility and Body Doping
Rao, V. Ramgopal
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Rao, V. Ramgopal
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Circuits
1
Current
1
Design methodology
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Double-gate MOSFET (DGFET)
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FinFETs
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Mobility
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Modeling
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Nanotechnology
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Robust stability
1
Saturation
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