Collection's Items (Sorted by Submit Date in Descending order): 901 to 920 of 2012
| Issue Date | Title | Author(s) |
| 2014 | Effect of Longitudinal Electric Field and Self Heating of Channel on Linearity and Gain of AlGaN/GaN HEMT on Sapphire (0001) | Kumar, Rahul |
| 2014 | Comprehensive modeling of gas sensor based on Si3N4-passivated AlGaN/GaN Schottky diode | Kumar, Rahul |
| 2014 | Comprehensive study of AlGaAs/GaAs heterostructures grown by MBE: Structural and compositional analysis | Kumar, Rahul |
| 2015 | Temperature dependent etching of Gallium Nitride layers grown by PA -MBE | Kumar, Rahul |
| 2015-08 | Simplified gas sensor model based on AlGaN/GaN heterostructure Schottky diode | Kumar, Rahul |
| 2018 | Harnessing Quantum Wave Nature of Individual Electrons for Single Photon Detection | Kumar, Rahul |
| 2017-06 | Prospects and fundamental limitations of room temperature, non-avalanche, semiconductor photon-counting sensors (Conference Presentation) | Kumar, Rahul |
| 2018 | Excitation intensity and InAs thickness dependent luminescence properties of ultrathin InAs layer in GaAs matrix | Kumar, Rahul |
| 2020-10 | Nanostructured Photocathodes For Spin-Polarized Electron Beams | Kumar, Rahul |
| 2015-01 | High-resolution X-ray diffraction analysis of AlxGa1xN/InxGa1xN/GaN on sapphire multilayer structures: Theoretical, simulations, and experimental observations | Kumar, Rahul |
| 2014-11 | Graded barrier AlGaN/AlN/GaN heterostructure for improved 2-dimensional electron gas carrier concentration and mobility | Kumar, Rahul |
| 2014-11 | Comprehensive strain and band gap analysis of PA-MBE grown AlGaN/GaN heterostructures on sapphire with ultra thin buffer | Kumar, Rahul |
| 2015-01 | Comparison of different pathways in metamorphic graded buffers on GaAs substrate: Indium incorporation with surface roughness | Kumar, Rahul |
| 2015-05 | A novel growth strategy and characterization of fully relaxed un-tilted FCC GaAs on Si(1 0 0) | Kumar, Rahul |
| 2015 | Enhancement of two dimensional electron gas concentrations due to Si3N4 passivation on Al0.3Ga0.7N/GaN heterostructure: strain and interface capacitance analysis | Kumar, Rahul |
| 2015-11 | 2DEG modulation in double quantum well enhancement mode nitride HEMT | Kumar, Rahul |
| 2016 | Fowler–Nordheim Tunnelling Contribution in AlGaN/GaN on Si (111) Schottky Current | Kumar, Rahul |
| 2015-06 | Evolution and analysis of nitride surface and interfaces by statistical techniques: A correlation with RHEED through kinetic roughening | Kumar, Rahul |
| 2015-12 | Comparison of different grading schemes in InGaAs metamorphic buffers on GaAs substrate: Tilt dependence on cross-hatch irregularities | Kumar, Rahul |
| 2016-03 | Thermodynamic analysis of acetone sensing in Pd/AlGaN/GaN heterostructure Schottky diodes at low temperatures | Kumar, Rahul |
Collection's Items (Sorted by Submit Date in Descending order): 901 to 920 of 2012
