Spin-orbit torque MRAM performance with different materials

Abstract

spin–orbit torque (SOT) technology has emerged as a promising approach for developing advanced magnetic devices with superior performance metrics. The SOT enables efficient control of magnetic states through the generation of spin currents via spin–orbit interaction. The precise control in magnetization switching with low power consumption in SOT based devices offers advancements in memory and logic applications. This paper presents a comparative study of the various parameters related to SOT performance across a range of materials, including Bi2Se3, Pt, Ta, W, WTe2, MoTe2, and IrMN. By analyzing key material properties such as spin-Hall conductivity (SHC), resistivity, damping constant, and spin-Hall angle (SHA). We evaluate how these factors influence the efficacy of SOT applications. The critical current density and material properties are key parameters for magnetization switching. Further, we explore the retention time and temperature stability for each material. Our findings aim to identify optimal materials for SOT-based devices and provide a framework for selecting materials based on specific performance criteria. This comparative analysis contributes to the progression of SOT technology and supports the progress of next-generation spintronic devices.