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Please use this identifier to cite or link to this item: http://dspace.bits-pilani.ac.in:8080/jspui/handle/123456789/20207
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dc.contributor.authorVolpe, Paolo-
dc.contributor.authorCasuglion, Mario-
dc.date.accessioned2025-11-21T18:17:04Z-
dc.date.available2025-11-21T18:17:04Z-
dc.date.issued1978-
dc.identifier.urihttp://dspace.bits-pilani.ac.in:8080/jspui/handle/123456789/20207-
dc.description.abstractThe T + CH3S1D3 system has been studied to evaluate the effect of reactant pressure on parent-T yield. The substitution yields for C—H and Si—D bonds have been found to be in the ratio 1 : 1.7. The decomposition rate of the excited parent-T has been calculated on the basis of the above ratio and compared with experimental yields at low pressure. Hypotheses to explain the discrepancy between calculated and experimental values are discussed.en_US
dc.language.isoenen_US
dc.publisherJournal of the Chemical Society : Faraday Transaction - I. The Chemical Society, London. 1978, 74 (04)en_US
dc.subjectJournal of the Chemical Society : Faraday Transaction - Ien_US
dc.subjectChemistryen_US
dc.subjectRecoil Tritium Reactionsen_US
dc.titleRecoil Tritium Reactions with CH3SiD3: Pressure Dependent Yieldsen_US
dc.typeArticleen_US
Appears in Collections:Journal Articles (before-1995)

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