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http://dspace.bits-pilani.ac.in:8080/jspui/xmlui/handle/123456789/2386| Title: | Two-step annealing of hot wire chemical vapor deposited a-Si:H films |
| Authors: | Roy, Banasri |
| Keywords: | Chemical Engineering Chemical vapor |
| Issue Date: | 2008 |
| Publisher: | Springer |
| Abstract: | A two-step annealing process was used to investigate the effect of dehydrogenation on crystallization and grain growth of low and high hydrogen content hot wire chemical vapor deposited (HWCVD) a-Si:H films. A low temperature pre-annealing followed by a rapid thermal annealing step at 600 °C was carried out. For the high hydrogen content film XRD (111) peak narrowed quite a bit, while opposite effect was observed for the low hydrogen content film. According to the grain sizes as calculated from TEM images, grain sizes of both of the two-step annealed high and low hydrogen content films are smaller than that of the single stage annealed film. |
| URI: | https://www.infona.pl/resource/bwmeta1.element.springer-ca160cc6-1625-393b-bb76-0cee597cd0bd http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/2386 |
| Appears in Collections: | Department of Chemical Engineering |
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