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http://dspace.bits-pilani.ac.in:8080/jspui/handle/123456789/2386Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Roy, Banasri | - |
| dc.date.accessioned | 2021-10-01T11:16:17Z | - |
| dc.date.available | 2021-10-01T11:16:17Z | - |
| dc.date.issued | 2008 | - |
| dc.identifier.uri | https://www.infona.pl/resource/bwmeta1.element.springer-ca160cc6-1625-393b-bb76-0cee597cd0bd | - |
| dc.identifier.uri | http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/2386 | - |
| dc.description.abstract | A two-step annealing process was used to investigate the effect of dehydrogenation on crystallization and grain growth of low and high hydrogen content hot wire chemical vapor deposited (HWCVD) a-Si:H films. A low temperature pre-annealing followed by a rapid thermal annealing step at 600 °C was carried out. For the high hydrogen content film XRD (111) peak narrowed quite a bit, while opposite effect was observed for the low hydrogen content film. According to the grain sizes as calculated from TEM images, grain sizes of both of the two-step annealed high and low hydrogen content films are smaller than that of the single stage annealed film. | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | Springer | en_US |
| dc.subject | Chemical Engineering | en_US |
| dc.subject | Chemical vapor | en_US |
| dc.title | Two-step annealing of hot wire chemical vapor deposited a-Si:H films | en_US |
| dc.type | Article | en_US |
| Appears in Collections: | Department of Chemical Engineering | |
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