Non-vacuum and PLD growth of next generation TCO materials

Please use this identifier to cite or link to this item: http://dspace.bits-pilani.ac.in:8080/jspui/xmlui/handle/123456789/2496

Full metadata record

DC Field	Value	Language
dc.contributor.author	Roy, Banasri	-
dc.date.accessioned	2021-10-03T09:55:36Z	-
dc.date.available	2021-10-03T09:55:36Z	-
dc.date.issued	2003-12-15	-
dc.identifier.uri	https://www.sciencedirect.com/science/article/pii/S0040609003011507	-
dc.identifier.uri	http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/2496	-
dc.description.abstract	Transparent conducting oxides represent a key component in a number of important opto-electronic technologies. The demand for improved materials is increasing. It is increasingly important to develop improved materials and process techniques. We report on the PLD growth of both Mo doped In-O, an n-type material with enhanced mobilities, and p-type Ca–CuInO2 films with improved conductivity. In both cases, very high quality films have been obtained with improved opto-electronic properties. We also report on a solution based route to p-type Cu2SrO2 which has produced phase pure films.	en_US
dc.language.iso	en	en_US
dc.publisher	Elsiever	en_US
dc.subject	Chemical Engineering	en_US
dc.subject	Laser ablation	en_US
dc.subject	Oxides	en_US
dc.subject	Solar cells	en_US
dc.subject	Conductivity	en_US
dc.subject	Indium oxide	en_US
dc.title	Non-vacuum and PLD growth of next generation TCO materials	en_US
dc.type	Article	en_US
Appears in Collections:	Department of Chemical Engineering

Files in This Item:

There are no files associated with this item.