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Please use this identifier to cite or link to this item: http://dspace.bits-pilani.ac.in:8080/jspui/xmlui/handle/123456789/8958
Title: A Compact Model of Gate Capacitance in Ballistic Gate-All-Around Carbon Nanotube Field Effect Transistors
Authors: Gupta, Navneet
Keywords: EEE
Carbon Nanotube Field-Effect Transistors (CNFETs)
Quantum Capacitance
Gate Capacitance
Gate-all-around Structure
Issue Date: 2021
Publisher: MERC
Abstract: This paper presents a one-dimensional analytical model for calculating gate capacitance in Gate-All-Around Carbon Nanotube Field Effect Transistor (GAA-CNFET) using electrostatic approach. The proposed model is inspired by the fact that quantum capacitance appears for the Carbon Nanotube (CNT) which has a low density of states. The gate capacitance is a series combination of dielectric capacitance and quantum capacitance. The model so obtained depends on the density of states (DOS), surface potential of CNT, gate voltage and diameter of CNT. The quantum capacitance obtained using developed analytical model is 2.84 pF/cm for (19, 0) CNT, which is very close to the reported value 2.54 pF/cm. While, the gate capacitance comes out to be 24.3×10-2 pF/cm. Further, the effects of dielectric thickness and diameter of CNT on the gate capacitance are also analysed. It was found that as we reduce the thickness of dielectric layer, the gate capacitance increases very marginally which provides better gate control upon the channel. The close match between the calculated and simulated results confirms the validity of the proposed model.
URI: https://www.ije.ir/article_130895.html
http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/8958
Appears in Collections:Department of Electrical and Electronics Engineering

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