Adaptation of a compact SPICE level 3 model for oxide thin-film transistors

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DC Field	Value	Language
dc.contributor.author	Gupta, Navneet	-
dc.contributor.author	Kandpal, Kavindra	-
dc.date.accessioned	2023-02-06T04:47:38Z	-
dc.date.available	2023-02-06T04:47:38Z	-
dc.date.issued	2019-05	-
dc.identifier.uri	https://link.springer.com/article/10.1007/s10825-019-01344-0	-
dc.identifier.uri	http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/8969	-
dc.description.abstract	Oxide thin-film transistors (TFTs) and metal–oxide–semiconductor field-effect transistors (MOSFETs) operate via different conduction mechanisms but exhibit similar device characteristics. In this work, a SPICE level 3 model originally defined for MOSFETs is successfully adapted to provide a behavioral model for oxide TFTs. This adapted compact model is applicable to all kinds of oxide TFTs, irrespective of the channel and dielectric material used. To capture the TFT behavior efficiently, the experimental characteristic of an oxide TFT is used to set various SPICE level 3 parameters.	en_US
dc.language.iso	en	en_US
dc.publisher	Springer	en_US
dc.subject	EEE	en_US
dc.subject	SPICE Level-3	en_US
dc.subject	Thin-film transistors (TFTs)	en_US
dc.subject	MOSFETs	en_US
dc.title	Adaptation of a compact SPICE level 3 model for oxide thin-film transistors	en_US
dc.type	Article	en_US
Appears in Collections:	Department of Electrical and Electronics Engineering

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