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DC Field | Value | Language |
---|---|---|
dc.contributor.author | Gupta, Navneet | - |
dc.date.accessioned | 2023-02-06T04:49:52Z | - |
dc.date.available | 2023-02-06T04:49:52Z | - |
dc.date.issued | 2019-05 | - |
dc.identifier.uri | https://link.springer.com/article/10.1007/s10825-019-01343-1 | - |
dc.identifier.uri | http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/8970 | - |
dc.description.abstract | Performance parameters of an organic thin-film transistor (OTFT) and their relation to the material parameters of the gate dielectric are analyzed. Based on the analysis, the surface energy, dielectric constant, glass-transition temperature, and breakdown field are identified as key parameters. Various multicriteria decision-making approaches, viz. multiobjective optimization using simple ratio analysis (MOOSRA), technique for order preference by similarity to ideal solution (TOPSIS) and Vlsekriterijumska Optimizacija I KOmpromisno Resenje (VIKOR), are used to solve the material selection problem. Various low-k polymers are analyzed, and it is observed that CYTOP is a promising gate dielectric material for OTFTs, with good agreement between the MOOSRA, VIKOR, and TOPSIS regarding this choice | en_US |
dc.language.iso | en | en_US |
dc.publisher | Springer | en_US |
dc.subject | EEE | en_US |
dc.subject | Organic thin-film transistors (OTFTs) | en_US |
dc.title | Low-k polymer gate dielectric selection for organic thin-film transistors (OTFTs) using material selection methodologies | en_US |
dc.type | Article | en_US |
Appears in Collections: | Department of Electrical and Electronics Engineering |
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