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Please use this identifier to cite or link to this item: http://dspace.bits-pilani.ac.in:8080/jspui/xmlui/handle/123456789/8970
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dc.contributor.authorGupta, Navneet-
dc.date.accessioned2023-02-06T04:49:52Z-
dc.date.available2023-02-06T04:49:52Z-
dc.date.issued2019-05-
dc.identifier.urihttps://link.springer.com/article/10.1007/s10825-019-01343-1-
dc.identifier.urihttp://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/8970-
dc.description.abstractPerformance parameters of an organic thin-film transistor (OTFT) and their relation to the material parameters of the gate dielectric are analyzed. Based on the analysis, the surface energy, dielectric constant, glass-transition temperature, and breakdown field are identified as key parameters. Various multicriteria decision-making approaches, viz. multiobjective optimization using simple ratio analysis (MOOSRA), technique for order preference by similarity to ideal solution (TOPSIS) and Vlsekriterijumska Optimizacija I KOmpromisno Resenje (VIKOR), are used to solve the material selection problem. Various low-k polymers are analyzed, and it is observed that CYTOP is a promising gate dielectric material for OTFTs, with good agreement between the MOOSRA, VIKOR, and TOPSIS regarding this choiceen_US
dc.language.isoenen_US
dc.publisherSpringeren_US
dc.subjectEEEen_US
dc.subjectOrganic thin-film transistors (OTFTs)en_US
dc.titleLow-k polymer gate dielectric selection for organic thin-film transistors (OTFTs) using material selection methodologiesen_US
dc.typeArticleen_US
Appears in Collections:Department of Electrical and Electronics Engineering

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