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Please use this identifier to cite or link to this item: http://dspace.bits-pilani.ac.in:8080/jspui/handle/123456789/8972
Title: Analysis of Graphene/SiO2/p-Si Schottky Diode by Current–Voltage and Impedance Measurements
Authors: Gupta, Navneet
Keywords: EEE
Schottky diode
Graphene nanoplatelets (GNP)
Impedance analysis
Silicon
Issue Date: Nov-2018
Publisher: Springer
Abstract: We explore the electrical properties of graphene–silicon dioxide–p–silicon Schottky junction diode using current–voltage characteristics and impedance analysis. Ideality factor, rectification ratio, and series resistance are extracted from the experimental data. A linear response of series resistance of graphene/SiO2/p-Si Schottky diode is observed with respect to change in forward bias voltage from 0 to 2 V.
URI: https://link.springer.com/chapter/10.1007/978-981-13-2553-3_57
http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/8972
Appears in Collections:Department of Electrical and Electronics Engineering

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