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http://dspace.bits-pilani.ac.in:8080/jspui/handle/123456789/8972Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Gupta, Navneet | - |
| dc.date.accessioned | 2023-02-06T06:37:11Z | - |
| dc.date.available | 2023-02-06T06:37:11Z | - |
| dc.date.issued | 2018-11 | - |
| dc.identifier.uri | https://link.springer.com/chapter/10.1007/978-981-13-2553-3_57 | - |
| dc.identifier.uri | http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/8972 | - |
| dc.description.abstract | We explore the electrical properties of graphene–silicon dioxide–p–silicon Schottky junction diode using current–voltage characteristics and impedance analysis. Ideality factor, rectification ratio, and series resistance are extracted from the experimental data. A linear response of series resistance of graphene/SiO2/p-Si Schottky diode is observed with respect to change in forward bias voltage from 0 to 2 V. | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | Springer | en_US |
| dc.subject | EEE | en_US |
| dc.subject | Schottky diode | en_US |
| dc.subject | Graphene nanoplatelets (GNP) | en_US |
| dc.subject | Impedance analysis | en_US |
| dc.subject | Silicon | en_US |
| dc.title | Analysis of Graphene/SiO2/p-Si Schottky Diode by Current–Voltage and Impedance Measurements | en_US |
| dc.type | Article | en_US |
| Appears in Collections: | Department of Electrical and Electronics Engineering | |
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