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Please use this identifier to cite or link to this item: http://dspace.bits-pilani.ac.in:8080/jspui/xmlui/handle/123456789/8983
Title: Material selection for CMOS compatible high Q and high frequency MEMS disk resonator using Ashby approach.
Authors: Gupta, Navneet
Keywords: EEE
COMPLEMENTARY metal oxide semiconductor performance
MICROELECTROMECHANICAL systems
Resonators
CMOS Devices
Material selection
Mems
Issue Date: 2016
Publisher: International Journal of Nanoelectronics & Materials
Abstract: In this paper, the most appropriate material for MEMS Disk resonator compatible with CMOS technology is selected using the Ashby approach. Materials indices are formulated based on three primary performance parameters, namely high Q, high resonant frequency, and low process temperature. The selection chart shows that for high Q and high frequency, polySi0.35Ge0.65 is the best possible material for MEMS resonator. The close match between theoretical and experimental findings validates our proposed study.
URI: https://eds.p.ebscohost.com/eds/detail/detail?vid=0&sid=c439d406-5d94-469a-a692-5eed10dd14f5%40redis&bdata=JkF1dGhUeXBlPWlwLHNoaWImc2l0ZT1lZHMtbGl2ZSZzY29wZT1zaXRl#AN=116834360&db=asn
http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/8983
Appears in Collections:Department of Electrical and Electronics Engineering

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