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Please use this identifier to cite or link to this item: http://dspace.bits-pilani.ac.in:8080/jspui/xmlui/handle/123456789/8983
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dc.contributor.authorGupta, Navneet-
dc.date.accessioned2023-02-06T08:43:37Z-
dc.date.available2023-02-06T08:43:37Z-
dc.date.issued2016-
dc.identifier.urihttps://eds.p.ebscohost.com/eds/detail/detail?vid=0&sid=c439d406-5d94-469a-a692-5eed10dd14f5%40redis&bdata=JkF1dGhUeXBlPWlwLHNoaWImc2l0ZT1lZHMtbGl2ZSZzY29wZT1zaXRl#AN=116834360&db=asn-
dc.identifier.urihttp://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/8983-
dc.description.abstractIn this paper, the most appropriate material for MEMS Disk resonator compatible with CMOS technology is selected using the Ashby approach. Materials indices are formulated based on three primary performance parameters, namely high Q, high resonant frequency, and low process temperature. The selection chart shows that for high Q and high frequency, polySi0.35Ge0.65 is the best possible material for MEMS resonator. The close match between theoretical and experimental findings validates our proposed study.en_US
dc.language.isoenen_US
dc.publisherInternational Journal of Nanoelectronics & Materialsen_US
dc.subjectEEEen_US
dc.subjectCOMPLEMENTARY metal oxide semiconductor performanceen_US
dc.subjectMICROELECTROMECHANICAL systemsen_US
dc.subjectResonatorsen_US
dc.subjectCMOS Devicesen_US
dc.subjectMaterial selectionen_US
dc.subjectMemsen_US
dc.titleMaterial selection for CMOS compatible high Q and high frequency MEMS disk resonator using Ashby approach.en_US
dc.typeArticleen_US
Appears in Collections:Department of Electrical and Electronics Engineering

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