Please use this identifier to cite or link to this item:
http://dspace.bits-pilani.ac.in:8080/jspui/xmlui/handle/123456789/9002
Title: | Material selection methodology for gate dielectric material in metal–oxide–semiconductor devices |
Authors: | Gupta, Navneet |
Keywords: | EEE Semiconductor devices Metal–oxide–semiconductor (MOS) |
Issue Date: | Mar-2012 |
Publisher: | Elsevier |
Abstract: | Due to the continuous scaling of metal–oxide–semiconductor (MOS) devices, SiO2 can no longer be used as a gate dielectric, so it has to be replaced by some suitable high-κ dielectrics. As there are variety of high-κ dielectrics available to designer, so there is a need for a proper technique to select the best possible material. In this paper, we present a materials selection based on the Ashby’s methodology to optimize the choice of gate dielectric material in MOS devices. In this work, performance indices and material indices have been developed for gate material in MOS devices and thereafter material selection chart is plotted. The selection chart shows that La2O3 is the most suitable materials followed by HfO2 and ZrO2 for being used as gate dielectric in MOS devices. |
URI: | https://www.sciencedirect.com/science/article/pii/S0261306911007138 http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/9002 |
Appears in Collections: | Department of Electrical and Electronics Engineering |
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.