Please use this identifier to cite or link to this item:
http://dspace.bits-pilani.ac.in:8080/jspui/xmlui/handle/123456789/9013
Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Gupta, Navneet | - |
dc.date.accessioned | 2023-02-06T11:06:42Z | - |
dc.date.available | 2023-02-06T11:06:42Z | - |
dc.date.issued | 2006 | - |
dc.identifier.uri | https://www.worldscientific.com/doi/10.1142/S0217984906010986 | - |
dc.identifier.uri | http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/9013 | - |
dc.description.abstract | The grain boundary scattering effects on carrier transport were studied analytically by considering the grains and grain boundaries that act as the series resistance in the channel of a polycrystalline silicon (poly-Si) thin-film transistor (TFT). Effective carrier mobility (μ*) and drain current (ID) variations were analyzed using the model by changing the grain boundary width (DGB) in the channel as a function of the gate voltage, in the linear region of the poly-Si TFT characteristic at room temperature. μ* and ID were computed for DGB ranging from 1 nm to 10 nm. It was found that for different values of the gate voltage, μ* and ID increased with a decrease in grain boundary width (DGB). A remarkable improvement was observed in device characteristics as DGB was decreased below 2 nm. The predicted results using the present model are in a reasonably good agreement with experimental results, hence confirming the validity of the model. | en_US |
dc.language.iso | en | en_US |
dc.publisher | World Scientific | en_US |
dc.subject | EEE | en_US |
dc.subject | Polysilicon thin-film transistor | en_US |
dc.subject | Grain boundary | en_US |
dc.subject | Effective carrier mobility | en_US |
dc.title | Effects of grain boundary width on transfer characteristics of polysilicon thin-film transistor | en_US |
dc.type | Article | en_US |
Appears in Collections: | Department of Electrical and Electronics Engineering |
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.