Please use this identifier to cite or link to this item:
http://dspace.bits-pilani.ac.in:8080/jspui/xmlui/handle/123456789/9069Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Chaubey, V.K. | - |
| dc.date.accessioned | 2023-02-08T05:33:12Z | - |
| dc.date.available | 2023-02-08T05:33:12Z | - |
| dc.date.issued | 2016 | - |
| dc.identifier.uri | https://ieeexplore.ieee.org/abstract/document/7570647 | - |
| dc.identifier.uri | http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/9069 | - |
| dc.description.abstract | The model for current and manufacture of a moderately doped nanoscale FinFETs with parabolic cross section is proposed. The model of trapezoid FinFETs is extended to parabolic FinFETs, furthermore diminishing corner effects. The model is proved by comparing the results of present trapezoidal FinFET with Parabolic FinFET having similar parameters. The advantage of high drive current and transconductance makes the proposed model suitable for implementation in circuit simulation tools. | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | IEEE | en_US |
| dc.subject | EEE | en_US |
| dc.subject | MATLAB modeling | en_US |
| dc.subject | Drain current | en_US |
| dc.subject | Nanoscale Parabolic FinFET | en_US |
| dc.title | Compact modeling of a parabolic cross section nano-FinFET | en_US |
| dc.type | Article | en_US |
| Appears in Collections: | Department of Electrical and Electronics Engineering | |
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.