A novel sub-1 volt bandgap reference with all CMOS

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DC Field	Value	Language
dc.contributor.author	Gupta, Anu	-
dc.date.accessioned	2023-02-10T04:24:44Z	-
dc.date.available	2023-02-10T04:24:44Z	-
dc.date.issued	2008-07	-
dc.identifier.uri	https://dl.acm.org/doi/10.5555/1576429.1576475	-
dc.identifier.uri	http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/9135	-
dc.description.abstract	This paper deals with the design of novel sub-1-V bandgap reference circuit using only MOS transistors in 0.18 µm CMOS technology, for a supply voltage of 1.8V. The circuit produces a voltage reference of 466.5 mV at 27°C with a temperature coefficient of 28.4 ppm/°C in the range of -20 to +120°C. The power supply rejection of circuit is -30 dB at 8 KHz and this rejection further increase to -50 dB at 10 KHz. Power dissipation is 3.98 µW. The circuit is also tested at four process corners. Circuit is simulated with Eldo SPICE.	en_US
dc.language.iso	en	en_US
dc.publisher	ACM Digital Library	en_US
dc.subject	EEE	en_US
dc.subject	C-CMOS	en_US
dc.subject	Bandgap	en_US
dc.title	A novel sub-1 volt bandgap reference with all CMOS	en_US
dc.type	Article	en_US
Appears in Collections:	Department of Electrical and Electronics Engineering

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