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Please use this identifier to cite or link to this item: http://dspace.bits-pilani.ac.in:8080/jspui/handle/123456789/9168
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dc.contributor.authorGupta, Anu-
dc.date.accessioned2023-02-11T04:01:54Z-
dc.date.available2023-02-11T04:01:54Z-
dc.date.issued2017-
dc.identifier.urihttps://ieeexplore.ieee.org/document/8068658-
dc.identifier.urihttp://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/9168-
dc.description.abstractThis paper presents a novel technique to achieve an effective capacitance, multiples of up to 40 times that of a capacitor embedded in electronic circuits thus minimizing the area of silicon die. The technique employed for multiplication is PMOS transistor based low-voltage cascode current mirroring consuming low-power. The proposed design, capable of achieving high multiplication factors, is simulated in Cadence using 180nm technology library. An application of the capacitance multiplier shifting the dominant pole by 254kHz of a 19.7dB gain common source amplifier is also presented.en_US
dc.language.isoenen_US
dc.publisherIEEEen_US
dc.subjectEEEen_US
dc.subjectCapacitance multiplieren_US
dc.subjectLow-voltage cascode mirroringen_US
dc.subjectDominant poleen_US
dc.titleCurrent-Mode PMOS capacitance multiplieren_US
dc.typeArticleen_US
Appears in Collections:Department of Electrical and Electronics Engineering

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