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http://dspace.bits-pilani.ac.in:8080/jspui/xmlui/handle/123456789/9430| Title: | Leakage Immune 9T-SRAM Cell in Sub-threshold Region |
| Authors: | Gupta, Anu Asati, Abhijit |
| Keywords: | EEE Low power SRAM Process variations Sub-threshold SRAM Static noise margin Stability |
| Issue Date: | 2016 |
| Publisher: | IAES |
| Abstract: | The paper presents a variability-aware modified 9T SRAM cell. In comparison to 6T SRAM cell the proposed cell achieves 1.3× higher read-SNM and 1.77× higher write-SNM with 79.6% SINM (static current noise margin) distribution at the expense of 14.7× lower WTI (write trip current) at 0.4 V power supply voltage, while maintaining similar stability in hold mode. Thus, comparative analysis exhibits that the proposed design has a significant improvement, thereby achieving high cell stability at 45nm technology. |
| URI: | https://www.beei.org/index.php/EEI/article/view/557 http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/9430 |
| Appears in Collections: | Department of Electrical and Electronics Engineering |
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