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DC Field | Value | Language |
---|---|---|
dc.contributor.author | Asati, Abhijit | - |
dc.date.accessioned | 2023-03-03T05:26:30Z | - |
dc.date.available | 2023-03-03T05:26:30Z | - |
dc.date.issued | 2012 | - |
dc.identifier.uri | https://ieeexplore.ieee.org/abstract/document/6526582 | - |
dc.identifier.uri | http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/9458 | - |
dc.description.abstract | I-V characteristic is one of the important results produced by a device simulator. In this article, a novel and interactive matrix based algorithm is presented to draw the device structure in 2-D or 3-D style and to plot the I-V characteristic of the device for user specified doping and biasing conditions. Algorithm creates 2-D or 3-D matrix of the device from device description mentioned by the user. This device matrix undergoes many different operations, and various mathematical computations are performed, using which I-V characteristic is plotted. This approach gives a novel idea of basic device level tool development. The students and device level engineers can find this work useful which offers them an interactive and instant way to draw I-V characteristics of the device. The algorithm implementation is modular and matrix based, which is done using MATLAB ® . | en_US |
dc.language.iso | en | en_US |
dc.publisher | IEEE | en_US |
dc.subject | EEE | en_US |
dc.subject | Device simulator | en_US |
dc.subject | I-V characteristics | en_US |
dc.subject | Device matrix | en_US |
dc.subject | MATLAB® | en_US |
dc.title | Design of a Static Current Simulator Using Device Matrix Approach | en_US |
dc.type | Article | en_US |
Appears in Collections: | Department of Electrical and Electronics Engineering |
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