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Please use this identifier to cite or link to this item: http://dspace.bits-pilani.ac.in:8080/jspui/xmlui/handle/123456789/9458
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dc.contributor.authorAsati, Abhijit-
dc.date.accessioned2023-03-03T05:26:30Z-
dc.date.available2023-03-03T05:26:30Z-
dc.date.issued2012-
dc.identifier.urihttps://ieeexplore.ieee.org/abstract/document/6526582-
dc.identifier.urihttp://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/9458-
dc.description.abstractI-V characteristic is one of the important results produced by a device simulator. In this article, a novel and interactive matrix based algorithm is presented to draw the device structure in 2-D or 3-D style and to plot the I-V characteristic of the device for user specified doping and biasing conditions. Algorithm creates 2-D or 3-D matrix of the device from device description mentioned by the user. This device matrix undergoes many different operations, and various mathematical computations are performed, using which I-V characteristic is plotted. This approach gives a novel idea of basic device level tool development. The students and device level engineers can find this work useful which offers them an interactive and instant way to draw I-V characteristics of the device. The algorithm implementation is modular and matrix based, which is done using MATLAB ® .en_US
dc.language.isoenen_US
dc.publisherIEEEen_US
dc.subjectEEEen_US
dc.subjectDevice simulatoren_US
dc.subjectI-V characteristicsen_US
dc.subjectDevice matrixen_US
dc.subjectMATLAB®en_US
dc.titleDesign of a Static Current Simulator Using Device Matrix Approachen_US
dc.typeArticleen_US
Appears in Collections:Department of Electrical and Electronics Engineering

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