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Please use this identifier to cite or link to this item: http://dspace.bits-pilani.ac.in:8080/jspui/xmlui/handle/123456789/9459
Title: Selection of Optimum Device Size and Trans-Conductance Ratio for High Speed Digital CMOS Inverter Design for a Given Fanout Load
Authors: Asati, Abhijit
Shekhar, Chandra
Keywords: EEE
Inverters
MOS devices
CMOS logic circuits
Logic design
Logic devices
Logic gates
Circuit noise
CMOS technology
Issue Date: 2009
Publisher: IEEE
Abstract: The PMOS/NMOS width ratio (ß) and W/L ratio of NMOS device is an important ratio in the design of digital logic cells using conventional CMOS logic design style. In this paper we propose a simulation-based method applied to CMOS inverter to accurately estimate an optimum W/L ratio of NMOS device and PMOS/NMOS width ratio when fanout loading of 1, 4 and 8 cells of similar type are present. The appropriate selection of W/L ratio of NMOS device and PMOS/NMOS width ratio makes the digital design faster and reduces the power consumption.
URI: https://ieeexplore.ieee.org/abstract/document/5395495
http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/9459
Appears in Collections:Department of Electrical and Electronics Engineering

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