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dc.contributor.authorAsati, Abhijit-
dc.contributor.authorShekhar, Chandra-
dc.date.accessioned2023-03-03T05:30:23Z-
dc.date.available2023-03-03T05:30:23Z-
dc.date.issued2009-
dc.identifier.urihttps://ieeexplore.ieee.org/abstract/document/5395495-
dc.identifier.urihttp://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/9459-
dc.description.abstractThe PMOS/NMOS width ratio (ß) and W/L ratio of NMOS device is an important ratio in the design of digital logic cells using conventional CMOS logic design style. In this paper we propose a simulation-based method applied to CMOS inverter to accurately estimate an optimum W/L ratio of NMOS device and PMOS/NMOS width ratio when fanout loading of 1, 4 and 8 cells of similar type are present. The appropriate selection of W/L ratio of NMOS device and PMOS/NMOS width ratio makes the digital design faster and reduces the power consumption.en_US
dc.language.isoenen_US
dc.publisherIEEEen_US
dc.subjectEEEen_US
dc.subjectInvertersen_US
dc.subjectMOS devicesen_US
dc.subjectCMOS logic circuitsen_US
dc.subjectLogic designen_US
dc.subjectLogic devicesen_US
dc.subjectLogic gatesen_US
dc.subjectCircuit noiseen_US
dc.subjectCMOS technologyen_US
dc.titleSelection of Optimum Device Size and Trans-Conductance Ratio for High Speed Digital CMOS Inverter Design for a Given Fanout Loaden_US
dc.typeArticleen_US
Appears in Collections:Department of Electrical and Electronics Engineering

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