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http://dspace.bits-pilani.ac.in:8080/jspui/xmlui/handle/123456789/9655| Title: | Hybrid Fabrication of Highly Rectifying p - n Homojunction Based on Nanostructured TiO2 |
| Authors: | Hazra, Arnab |
| Keywords: | EEE Sol-gel p-TiO2 Electrochemical n-TiO2 nanotubes p-n homojunction High rectification Low ideality factor |
| Issue Date: | Apr-2015 |
| Publisher: | IEEE |
| Abstract: | Present report concerns fabrication of nanostructured TiO 2 -based p-n homojunction, by the hybrid technique involving deposition of sol-gel grown not intentionally doped p-type TiO 2 nanoparticle layer over the electrochemically grown aligned, n-type TiO 2 nanotube array. The Au/p-TiO 2 /n-TiO 2 nanotube/Ti device was found to offer the ideality factor and the cut-in voltage of ~4 and ~1.2 V, respectively, in the temperature range of 30°C-80°C. The structural advantages of TiO 2 nanotubes, owing to the large junction area, eventually offered attractive rectifying behavior (~10 3 orders) of the fabricated junction. |
| URI: | https://ieeexplore.ieee.org/document/7086026 http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/9655 |
| Appears in Collections: | Department of Electrical and Electronics Engineering |
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