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DC Field | Value | Language |
---|---|---|
dc.contributor.author | Hazra, Arnab | - |
dc.date.accessioned | 2023-03-13T03:57:23Z | - |
dc.date.available | 2023-03-13T03:57:23Z | - |
dc.date.issued | 2015-04 | - |
dc.identifier.uri | https://ieeexplore.ieee.org/document/7086026 | - |
dc.identifier.uri | http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/9655 | - |
dc.description.abstract | Present report concerns fabrication of nanostructured TiO 2 -based p-n homojunction, by the hybrid technique involving deposition of sol-gel grown not intentionally doped p-type TiO 2 nanoparticle layer over the electrochemically grown aligned, n-type TiO 2 nanotube array. The Au/p-TiO 2 /n-TiO 2 nanotube/Ti device was found to offer the ideality factor and the cut-in voltage of ~4 and ~1.2 V, respectively, in the temperature range of 30°C-80°C. The structural advantages of TiO 2 nanotubes, owing to the large junction area, eventually offered attractive rectifying behavior (~10 3 orders) of the fabricated junction. | en_US |
dc.language.iso | en | en_US |
dc.publisher | IEEE | en_US |
dc.subject | EEE | en_US |
dc.subject | Sol-gel p-TiO2 | en_US |
dc.subject | Electrochemical n-TiO2 nanotubes | en_US |
dc.subject | p-n homojunction | en_US |
dc.subject | High rectification | en_US |
dc.subject | Low ideality factor | en_US |
dc.title | Hybrid Fabrication of Highly Rectifying p - n Homojunction Based on Nanostructured TiO2 | en_US |
dc.type | Article | en_US |
Appears in Collections: | Department of Electrical and Electronics Engineering |
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