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Title: | Role of Junction Geometry in Determining the Rectification Performance of Nanostructured TiO2-Based p-n Junctions |
Authors: | Hazra, Arnab |
Keywords: | EEE Electrochemical n-titanium dioxide (TiO₂) nanotubes Improved rectification Junction geometry p-n homojunction sol-gel p-TiO₂ Thermal n-TiO₂ |
Issue Date: | Jun-2015 |
Publisher: | IEEE |
Abstract: | This paper reports on the influence of junction geometry on the determination of the rectification performance of nanostructured titanium dioxide (TiO 2 )-based p-n homojunctions. Two types of p-n junction devices with different junction area/geometry were fabricated. Sol-gel grown undoped TiO 2 nanoparticle layer was employed as the p-type side in both the cases. Electrochemically grown TiO 2 nanotube array was used as the n-type side in one junction, while thermally grown n-TiO 2 thin film was used in another. It was found that, due to unique advantage of excessively large junction area, p-TiO 2 /n-TiO 2 nanotube device offered a dramatically improved ideality factor (4) and a rectification factor (1093) compared with its p-TiO 2 /n-TiO 2 (thermally grown) counterpart (17 and 34, respectively). The 2-D distribution probability of the depletion region in the case of the first device was empirically correlated with the experimental findings and was supported by the corresponding C-V measurement results. |
URI: | http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/9656 |
ISSN: | https://ieeexplore.ieee.org/document/7100894 |
Appears in Collections: | Department of Electrical and Electronics Engineering |
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