![DSpace logo](/jspui/image/logo.gif)
Please use this identifier to cite or link to this item:
http://dspace.bits-pilani.ac.in:8080/jspui/xmlui/handle/123456789/9656
Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Hazra, Arnab | - |
dc.date.accessioned | 2023-03-13T04:03:50Z | - |
dc.date.available | 2023-03-13T04:03:50Z | - |
dc.date.issued | 2015-06 | - |
dc.identifier.issn | https://ieeexplore.ieee.org/document/7100894 | - |
dc.identifier.uri | http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/9656 | - |
dc.description.abstract | This paper reports on the influence of junction geometry on the determination of the rectification performance of nanostructured titanium dioxide (TiO 2 )-based p-n homojunctions. Two types of p-n junction devices with different junction area/geometry were fabricated. Sol-gel grown undoped TiO 2 nanoparticle layer was employed as the p-type side in both the cases. Electrochemically grown TiO 2 nanotube array was used as the n-type side in one junction, while thermally grown n-TiO 2 thin film was used in another. It was found that, due to unique advantage of excessively large junction area, p-TiO 2 /n-TiO 2 nanotube device offered a dramatically improved ideality factor (4) and a rectification factor (1093) compared with its p-TiO 2 /n-TiO 2 (thermally grown) counterpart (17 and 34, respectively). The 2-D distribution probability of the depletion region in the case of the first device was empirically correlated with the experimental findings and was supported by the corresponding C-V measurement results. | en_US |
dc.language.iso | en | en_US |
dc.publisher | IEEE | en_US |
dc.subject | EEE | en_US |
dc.subject | Electrochemical n-titanium dioxide (TiO₂) nanotubes | en_US |
dc.subject | Improved rectification | en_US |
dc.subject | Junction geometry | en_US |
dc.subject | p-n homojunction | en_US |
dc.subject | sol-gel p-TiO₂ | en_US |
dc.subject | Thermal n-TiO₂ | en_US |
dc.title | Role of Junction Geometry in Determining the Rectification Performance of Nanostructured TiO2-Based p-n Junctions | en_US |
dc.type | Article | en_US |
Appears in Collections: | Department of Electrical and Electronics Engineering |
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.