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DC Field | Value | Language |
---|---|---|
dc.contributor.author | Hazra, Arnab | - |
dc.date.accessioned | 2023-03-13T09:48:06Z | - |
dc.date.available | 2023-03-13T09:48:06Z | - |
dc.date.issued | 2013-12 | - |
dc.identifier.uri | https://ieeexplore.ieee.org/abstract/document/6727683 | - |
dc.identifier.uri | http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/9675 | - |
dc.description.abstract | In this present investigation nanocrystalline TiO 2 based sensor was developed for low ppm level (10-100) acetone detection. TiO 2 thin film (Thickness: 1 μm) was prepared by solgel technique and deposited on the p-Si substrate (5 Ωcm, (100)) by dip coating method. Film was annealed at 450°C for 3 hours in air environment. XRD and FESEM study confirmed the (101) anatase growth with ~6-9 nm particle size. Pd electrode was deposited on the TiO 2 sensing layer to prepare the Pd/TiO 2 /p-Si Metal-Insulator-Semiconductor (MIS) device structure. A detailed acetone sensor study was performed for this MIS device in the temperature range of 100 to 200°C. Sensor showed a repeatable sensing performance with a appreciably fast response time of 7.7 s at 100°C towards 10 ppm acetone with corresponding recovery time of 13 s at 200°C in 10 ppm acetone. Response magnitude was increased from 3.2% to 6.4% with increasing the acetone concentration from 10 to 100 ppm at 200°C. | en_US |
dc.language.iso | en | en_US |
dc.publisher | IEEE | en_US |
dc.subject | EEE | en_US |
dc.subject | Nanocrystalline TiO2 | en_US |
dc.subject | MIS device | en_US |
dc.subject | Acetone sensing | en_US |
dc.subject | Low operating temperature | en_US |
dc.title | Low temperature low ppm acetone detection by Pd/TiO2/p-Si Metal-Insulator-Semiconductor devices | en_US |
dc.type | Article | en_US |
Appears in Collections: | Department of Electrical and Electronics Engineering |
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