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DC Field | Value | Language |
---|---|---|
dc.contributor.author | Chaturvedi, Nitin | - |
dc.date.accessioned | 2023-03-14T10:14:47Z | - |
dc.date.available | 2023-03-14T10:14:47Z | - |
dc.date.issued | 2020-10 | - |
dc.identifier.uri | https://www.emerald.com/insight/content/doi/10.1108/CW-09-2018-0073/full/html | - |
dc.identifier.uri | http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/9716 | - |
dc.description.abstract | Emerging event-driven applications such as the internet-of-things requires an ultra-low power operation to prolong battery life. Shutting down non-functional block during standby mode is an efficient way to save power. However, it results in a loss of system state, and a considerable amount of energy is required to restore the system state. Conventional state retentive flip-flops have an “Always ON” circuitry, which results in large leakage power consumption, especially during long standby periods. Therefore, this paper aims to explore the emerging non-volatile memory element spin transfer torque-magnetic tunnel junction (STT-MTJ) as one the prospective candidate to obtain a low-power solution to state retention. | en_US |
dc.language.iso | en | en_US |
dc.publisher | Emerald | en_US |
dc.subject | EEE | en_US |
dc.subject | D flip-flops | en_US |
dc.subject | Spin Transfer Torque-Magnetic Tunnel Junction (STT-MTJ) | en_US |
dc.title | Energy-efficient data retention in D flip-flops using STT-MTJ | en_US |
dc.type | Article | en_US |
Appears in Collections: | Department of Electrical and Electronics Engineering |
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