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http://dspace.bits-pilani.ac.in:8080/jspui/xmlui/handle/123456789/9734| Title: | A Novel Low Power Non-Volatile SRAM Cell with Self Write Termination |
| Authors: | Chaturvedi, Nitin |
| Keywords: | EEE SRAM Non-Volatile Memory (NVM) Write termination Magnetic Tunnel Junction (MTJ) Low power |
| Issue Date: | 2019 |
| Publisher: | IEEE |
| Abstract: | A non-volatile SRAM cell is proposed for low power applications using Spin Transfer Torque-Magnetic Tunnel Junction (STT-MTJ) devices. This novel cell offers non-volatile storage, thus allowing selected blocks of SRAM to be switched off during standby operation. To further increase the power savings, a write termination circuit is designed which detects completion of MTJ write and closes the bidirectional current path for the MTJ. A reduction of 25.81% in the number of transistors and reduction of 2.95% in the power consumption is achieved in comparison to prior work on write termination circuits. |
| URI: | https://ieeexplore.ieee.org/document/8944846 http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/9734 |
| Appears in Collections: | Department of Electrical and Electronics Engineering |
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