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Issue Date
Title
Author(s)
2015-10
Part II: A Fully Integrated RF PA in 28-nm CMOS With Device Design for Optimized Performance and ESD Robustness
Rao, V. Ramgopal
2015-09
A Fully Integrated RF PA in 28nm CMOS with Device Design for Optimized Performance and ESD Robustness
Rao, V. Ramgopal
2015-10
Comparison of breakdown characteristics of DeNMOS devices with various drain structures
Rao, V. Ramgopal
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Subject
3
EEE
3
Electrostatic discharge (ESD)
2
CMOS technologies
2
Device-circuit codesign
2
System-on-chip (SoC)
1
Drain extended NMOS (DeNMOS)
1
Drain-extended MOSFET (DeMOS)
1
Hot carrier
1
Input-output (I/O)
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Mixed-signal performance
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