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Results 1-10 of 11 (Search time: 0.002 seconds).
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Issue Date
Title
Author(s)
1999-07
The impact of high-/spl kappa/ gate dielectrics and metal gate electrodes on sub-100 nm MOSFETs
Rao, V. Ramgopal
1997-12
Simulation, fabrication and characterization of high performance planar-doped-barrier sub 100 nm channel MOSFETs
Rao, V. Ramgopal
1997-10
The Planar-Doped-Barrier FET:MOSFET Overcomes Conventional Limitations
Rao, V. Ramgopal
1999-05
A direct charge pumping technique for spatial profiling of hot-carrier induced interface and oxide traps in MOSFETs
Rao, V. Ramgopal
1999-09
A study of 100 nm channel length asymmetric channel MOSFET by using charge pumping
Rao, V. Ramgopal
1998-11
Application of charge pumping technique for sub-micron MOSFET characterization
Rao, V. Ramgopal
1998-05
Electric field tailoring in MBE-grown vertical sub-100 nm MOSFETs
Rao, V. Ramgopal
1998-10
Sub-0.18 /spl mu/m SOI MOSFETs using lateral asymmetric channel profile and Ge pre-amorphization salicide technology
Rao, V. Ramgopal
1999
100 nm channel length MNSFETs using a jet vapor deposited ultra-thin silicon nitride gate dielectric
Rao, V. Ramgopal
1999-09
Capacitance Degradation due to Fringing Field in Deep Sub-Micron MOSFETs with High-K Gate Dielectrics
Rao, V. Ramgopal
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Author
11
Rao, V. Ramgopal
Subject
11
EEE
2
Degradation
2
Hot carriers
2
Los Angeles Council
2
MOS devices
1
Amorphous materials
1
Capacitance
1
Charge pumping
1
Charge pumping (CP)
1
CMOS technology
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Date issued
6
1999
3
1998
2
1997