Browsing by Subject "Gallium Nitride (GaN)"

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Enhanced Performance of MSM UV Photodetectors by Molecular Modification of Gallium Nitride Using Porphyrin Organic Molecules

Rao, V. Ramgopal (IEEE, 2019-03)

In this brief, we present a novel surface modification process for gallium nitride (GaN) epitaxial films leading to enhanced ultraviolet (UV) photodetection. The adsorption of a layer of thiol-functionalized porphyrin-based ...
GaN HEMT based Biosensor for Low-Level Detection of Interferon-Gamma (IFN-γ)

Taliyan, Rajeev (2019)

This paper reports on the detection of a very small quantity (ng/ml) of circulatory biomarker Interferon- gamma (IFN-y) using highly sensitive Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) based biosensor. ...
Piezoresponse force microscopy (PFM) characterization of GaN nanowires grown by Plasma assisted Molecular beam epitaxy (PA-MBE)

Rao, V. Ramgopal (IEEE, 2016)

In this work, we have grown GaN nanowires using Plasma assisted Molecular beam epitaxy (PA-MBE) on Si (111) substrate. High resolution X-ray diffraction (HRXRD) characterization and scanning electron microscopy (SEM) studies ...
Significant improvement in the electrical characteristics of Schottky barrier diodes on molecularly modified Gallium Nitride surfaces

Rao, V. Ramgopal (AIP, 2018-04)

III-Nitride semiconductors face the issue of localized surface states, which causes fermi level pinning and large leakage current at the metal semiconductor interface, thereby degrading the device performance. In this work, ...

Now showing items 1-4 of 4

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