| dc.contributor.author |
Kumar, Rahul |
|
| dc.date.accessioned |
2023-04-03T08:57:18Z |
|
| dc.date.available |
2023-04-03T08:57:18Z |
|
| dc.date.issued |
2016-03 |
|
| dc.identifier.uri |
https://link.springer.com/article/10.1007/s13391-015-5249-9 |
|
| dc.identifier.uri |
http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/10135 |
|
| dc.description.abstract |
The reverse bias leakage current mechanism of AlGaN/InGaN/GaN heterostructure is investigated by current-voltage measurement in temperature range from 298 K to 423 K. The Higher electric field across the AlGaN barrier layer of AlGaN/InGaN/GaN double heterostructure due to higher polarization charge is found to be responsible for strong Fowler-Nordheim (FN) tunnelling in the electric field higher than 3.66 MV/cm. For electric field less than 3.56 MV/cm, the reverse bias leakage current is also found to follow the trap assisted Frenkel-Poole (FP) emission in low negative bias region. Analysis of reverse FP emission yielded the barrier height of trap energy level of 0.34 eV with respect to Fermi level. |
en_US |
| dc.language.iso |
en |
en_US |
| dc.publisher |
Springer |
en_US |
| dc.subject |
EEE |
en_US |
| dc.subject |
AlGaN/GaN heterostructure |
en_US |
| dc.title |
Reverse bias leakage current mechanism of AlGaN/InGaN/GaN heterostructure |
en_US |
| dc.type |
Article |
en_US |