Excitation intensity and InAs thickness dependent luminescence properties of ultrathin InAs layer in GaAs matrix

dc.contributor.author	Kumar, Rahul
dc.date.accessioned	2023-04-03T10:08:16Z
dc.date.available	2023-04-03T10:08:16Z
dc.date.issued	2018
dc.identifier.uri	https://aip.scitation.org/doi/10.1063/1.5053412
dc.identifier.uri	http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/10148
dc.description.abstract	A set of samples containing a single ultrathin InAs layer with varying thickness from 0.5 to 1.4ML in a GaAs matrix have been grown by molecular beam epitaxy on GaAs (001) substrates at low temperatures and investigated by low-temperature photoluminescence (PL). A linear change in emission energy with InAs thickness has been experimentally observed. The PL emission line shape from InAs/GaAs heterostructures has been investigated as a function of incident optical intensity. The interplay between uncorrelated electron-hole pairs, free excitons, and localized excitons, as a function of the excitation intensity, is found to play a significant role on the optical properties of the InAs layer and is described in detail	en_US
dc.language.iso	en	en_US
dc.publisher	AIP	en_US
dc.subject	EEE	en_US
dc.subject	GaAs matrix	en_US
dc.subject	Emission mechanism	en_US
dc.title	Excitation intensity and InAs thickness dependent luminescence properties of ultrathin InAs layer in GaAs matrix	en_US
dc.type	Article	en_US

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