| dc.contributor.author |
Kumar, Rahul |
|
| dc.date.accessioned |
2023-04-03T10:46:01Z |
|
| dc.date.available |
2023-04-03T10:46:01Z |
|
| dc.date.issued |
2014 |
|
| dc.identifier.uri |
https://ieeexplore.ieee.org/abstract/document/6808082 |
|
| dc.identifier.uri |
http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/10156 |
|
| dc.description.abstract |
High quality pseudomorphic Al 0.15 Ga 0.85 As/GaAs heterostructure was grown on an semi-insulating GaAs(100) substrate by Molecular Beam Epitaxy(MBE). Analysis of this structure was done by Photoluminescence (PL), HALL and High Resolution X-Ray diffraction (HRXRD). The nominal structure was confirmed by HRXRD, and aluminum mole fraction was measured from peak separation of the AlGaAs-GaAs (004) reflections. The layer thickness, and interface roughness were estimated from X-ray reflectivity (XRR) by fit with computer simulation. The carrier concentration, mobility and sheet resistance were measured from temperature dependent Hall experiment. The transport properties of the as-grown structure are found to be at par with the best literature reports. |
en_US |
| dc.language.iso |
en |
en_US |
| dc.publisher |
IEEE |
en_US |
| dc.subject |
EEE |
en_US |
| dc.subject |
MBE |
en_US |
| dc.subject |
High-Resolution X-Ray Diffraction (HRXRD) |
en_US |
| dc.subject |
PL |
en_US |
| dc.title |
Growth and characterization of Al0.15Ga0.85As/GaAs pseudomorphic heterostructure by MBE |
en_US |
| dc.type |
Article |
en_US |