dc.contributor.author |
Mourya, Satyendra Kumar |
|
dc.date.accessioned |
2023-04-06T05:31:29Z |
|
dc.date.available |
2023-04-06T05:31:29Z |
|
dc.date.issued |
2019-03 |
|
dc.identifier.uri |
https://www.sciencedirect.com/science/article/pii/S0925400518321610 |
|
dc.identifier.uri |
http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/10191 |
|
dc.description.abstract |
Present work demonstrates the hydrogen gas (H2) sensing characteristics of palladium-platinum (Pd-Pt) functionalized silicon carbide (SiC) thin film grown on porous silicon (PSi) substrate for high temperature applications. Nano-crystalline SiC thin film was deposited by RF magnetron sputtering on anodized PSi substrate. The loading of discrete ultra-thin Pd-Pt bimetallic catalytic layer was carefully controlled by varying the sputtering parameters. The proposed device architecture (Pd-Pt/SiC/PSi) revealed significant advantages, such as stable high sensing response, large tunable detection range (5–500 ppm), fast response/recovery time, excellent reproducibility, high selectivity, wide operating temperature regime (25–500 °C) and good durability. The observed high response may be ascribed to the combined effect of enhanced catalytic activity of bimetallic Pd-Pt layer and increased surface area of the proposed sensor. |
en_US |
dc.language.iso |
en |
en_US |
dc.publisher |
Elsevier |
en_US |
dc.subject |
EEE |
en_US |
dc.subject |
Porous silicon |
en_US |
dc.subject |
RF sputtering |
en_US |
dc.subject |
Silicon carbide (SiC) thin films |
en_US |
dc.subject |
Hydrogen sensor |
en_US |
dc.title |
Development of Pd-Pt functionalized high performance H2 gas sensor based on silicon carbide coated porous silicon for extreme environment applications |
en_US |
dc.type |
Article |
en_US |