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Fast and Low-Power CMOS and CNFET based Hysteresis Voltage Comparator

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dc.contributor.author Vidhyadharan, Sanjay
dc.date.accessioned 2023-04-06T09:07:02Z
dc.date.available 2023-04-06T09:07:02Z
dc.date.issued 2023-01
dc.identifier.uri https://www.tandfonline.com/doi/abs/10.1080/03772063.2023.2165176?journalCode=tijr20
dc.identifier.uri http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/10207
dc.description.abstract This paper presents CMOS and CNFET based hysteresis voltage comparators for low-voltage applications. The proposed CMOS and CNFET hysteresis comparators require merely 1.6 and 0.26 µW of power, respectively, which is less than one tenth of the power dissipated by the other advanced hysteresis comparators designs available in literature. The propagation delay observed in the proposed CMOS and CNFET hysteresis comparators are 162 and 47 ps, respectively, which is almost half the delay exhibited by the other hysteresis comparators. Overall, a 93–99% reduction in Power Delay Product (PDP) can be achieved. Furthermore, the proposed design requires only nine transistors compared to the 11–17 transistor requirement in conventional hysteresis comparators, thus saving up to 47% of chip area. en_US
dc.language.iso en en_US
dc.publisher Taylor & Francis en_US
dc.subject EEE en_US
dc.subject 45 nm CMOS technology en_US
dc.subject Carbon Nanotube Field-Effect Transistors (CNFETs) en_US
dc.subject Hysteresis voltage comparator en_US
dc.subject Low-power voltage comparator en_US
dc.subject Power-delay-product en_US
dc.title Fast and Low-Power CMOS and CNFET based Hysteresis Voltage Comparator en_US
dc.type Article en_US


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