dc.contributor.author |
Vidhyadharan, Sanjay |
|
dc.date.accessioned |
2023-04-06T09:07:02Z |
|
dc.date.available |
2023-04-06T09:07:02Z |
|
dc.date.issued |
2023-01 |
|
dc.identifier.uri |
https://www.tandfonline.com/doi/abs/10.1080/03772063.2023.2165176?journalCode=tijr20 |
|
dc.identifier.uri |
http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/10207 |
|
dc.description.abstract |
This paper presents CMOS and CNFET based hysteresis voltage comparators for low-voltage applications. The proposed CMOS and CNFET hysteresis comparators require merely 1.6 and 0.26 µW of power, respectively, which is less than one tenth of the power dissipated by the other advanced hysteresis comparators designs available in literature. The propagation delay observed in the proposed CMOS and CNFET hysteresis comparators are 162 and 47 ps, respectively, which is almost half the delay exhibited by the other hysteresis comparators. Overall, a 93–99% reduction in Power Delay Product (PDP) can be achieved. Furthermore, the proposed design requires only nine transistors compared to the 11–17 transistor requirement in conventional hysteresis comparators, thus saving up to 47% of chip area. |
en_US |
dc.language.iso |
en |
en_US |
dc.publisher |
Taylor & Francis |
en_US |
dc.subject |
EEE |
en_US |
dc.subject |
45 nm CMOS technology |
en_US |
dc.subject |
Carbon Nanotube Field-Effect Transistors (CNFETs) |
en_US |
dc.subject |
Hysteresis voltage comparator |
en_US |
dc.subject |
Low-power voltage comparator |
en_US |
dc.subject |
Power-delay-product |
en_US |
dc.title |
Fast and Low-Power CMOS and CNFET based Hysteresis Voltage Comparator |
en_US |
dc.type |
Article |
en_US |