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Memristor–CMOS hybrid ultra-low-power high-speed multivibrators

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dc.contributor.author Vidhyadharan, Sanjay
dc.date.accessioned 2023-04-06T09:17:00Z
dc.date.available 2023-04-06T09:17:00Z
dc.date.issued 2021-05
dc.identifier.uri https://link.springer.com/article/10.1007/s10470-021-01856-5
dc.identifier.uri http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/10210
dc.description.abstract Memristor–CMOS (MCM) technology enables fabrication of thin film memristors over the conventional CMOS devices and has the potential to significantly reduce the silicon-area and propagation delays in VLSI chips. The memristor not only has an extremely very useful characteristic of non-volatile memory, but also has the advantage of significantly lesser ON resistance Ron and lesser undesired parasitic capacitance as compared to MOSFETs. Innovative MCM hybrid re-configurable circuits can outperform conventional CMOS-only design and hence are being considered as an important device for future digital VLSI applications. This paper presents applications of TiO2−x–TiO2 memristor for digital multivibrator circuits at 45 nm CMOS technology node. The threshold adaptive memristor SPICE model has been used for design and performance-benchmarking of the proposed MCM multivibrators in circuit simulator (cadence®) at 45 nm technology node. The proposed new MCM mono-stable vibrator has a delay of merely 16 ps (98% lower delay than similar CMOS design) and requires a 45% lesser silicon area. Similarly, the proposed new MCM bi-stable vibrator has a delay of merely 5 ps (87% lower delay than similar CMOS design) and requires a 25% lesser silicon area. Moreover, the proposed MCM mono-stable and bi-stable multivibrators consume merely 0.1 μW and 0.5 μW of power, respectively, as compared to the 0.47 μW and 0.98 μW power required by corresponding CMOS-only multi-vibrators. The overall decrease in power delay product is 99% and 94%, respectively, in the proposed MCM mono-stable and bi-stable multivibrators as compared to the corresponding conventional CMOS-only multivibrators. en_US
dc.language.iso en en_US
dc.publisher Springer en_US
dc.subject EEE en_US
dc.subject Memristor–CMOS (MCM) en_US
dc.subject CMOS process en_US
dc.title Memristor–CMOS hybrid ultra-low-power high-speed multivibrators en_US
dc.type Article en_US


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