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An Efficient Ultra-Low-Power and Superior Performance Design of Ternary Half Adder Using CNFET and Gate-Overlap TFET Devices

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dc.contributor.author Vidhyadharan, Sanjay
dc.date.accessioned 2023-04-06T10:06:09Z
dc.date.available 2023-04-06T10:06:09Z
dc.date.issued 2021-01
dc.identifier.uri https://ieeexplore.ieee.org/document/9314093
dc.identifier.uri http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/10216
dc.description.abstract This paper presents a novel ultra-low power yet high-performance device and circuit design paradigm for implementing ternary logic based circuits using Gate-Overlap Tunnel FETs (GOTFETs) and Carbon Nanotube FETs (CNFETs). One of the distinguishing novelty reported in this work is the introduction of an innovative GOTFET device, which exhibits more than double the on-currents I on and less than 1/10 th the off-currents I off of equivalent, equally-sized mosfets at the same technology node. Most of the ternary logic designs reported earlier in the literature encode ternary bits into binary for combinational functionality and then use an Encoder to get back ternary output. Unlike the earlier designs, this paper presents a novel and significantly more efficient approach of directly designing ternary logical functions with Low V t Transistors (LVT) and High V t Transistors (HVT) using CNFET and GOTFET technologies. The new approach simplifies the design and reduces the required transistor count & interconnects, thereby reducing the delays and power consumption. The proposed Ternary Half Adder (THA) circuit, designed using CMOS, enables a 52% reduction in transistor count compared to the conventional CMOS designs available in the literature. The THA implemented with CNFET exhibits 27 ps (87% lower delay than similar CMOS design and consumes 2.4 μW power (11% lower than CMOS). On the other hand, CGOT THA exhibits 101 ps (51% lower delay than similar CMOS design) and consumes merely 1.26 μW power (53% lower than CMOS, in ultra-low power regime). The overall decrease in the Power Delay Products (PDPs) are 88% and 77%, respectively, in the proposed CNFET and CGOT THA circuits compared to the CMOS THA. en_US
dc.language.iso en en_US
dc.publisher IEEE en_US
dc.subject EEE en_US
dc.subject Carbon Nanotube Field-Effect Transistors (CNFETs) en_US
dc.subject Gate-Overlap Tunnel Field-Effect Transistors (GOTFETs) en_US
dc.subject Ternary half adder en_US
dc.subject Power-delay product (PDP) en_US
dc.subject Ternary logic en_US
dc.title An Efficient Ultra-Low-Power and Superior Performance Design of Ternary Half Adder Using CNFET and Gate-Overlap TFET Devices en_US
dc.type Article en_US


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