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Piezoresistance in ballistic graphene

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dc.contributor.author Rao, V. Ramgopal
dc.date.accessioned 2023-10-20T10:41:19Z
dc.date.available 2023-10-20T10:41:19Z
dc.date.issued 2019-12
dc.identifier.uri https://journals.aps.org/prmaterials/abstract/10.1103/PhysRevMaterials.3.124005
dc.identifier.uri http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12561
dc.description.abstract We investigate the longitudinal and transverse piezoresistance effect in suspended graphene in the ballistic regime. Utilizing parametrized tight-binding Hamiltonian along with Landauer quantum transport formalism, we devise a methodology to evaluate the piezoresistance effect in graphene. We evaluate the longitudinal and transverse gauge factor of graphene along armchair and zigzag directions in the linear elastic limit (0%–10%). The gauge factors along armchair and zigzag directions are identical. Our model predicts a significant enhancement (≈1000%) in the value of transverse gauge factor compared to longitudinal gauge factor along with sign inversion. The calculated value of longitudinal gauge factor is ≈0.3, whereas the transverse gauge factor is ≈−3.3. We rationalize our prediction based on the deformation of Dirac cone and change in separation between transverse modes due to longitudinal and transverse strain. The results obtained herein can serve as a template for high-strain piezoresistance effect of graphene in nanoelectromechanical systems. en_US
dc.language.iso en en_US
dc.publisher APS en_US
dc.subject EEE en_US
dc.subject Piezoresistance en_US
dc.subject Ballistic graphene en_US
dc.title Piezoresistance in ballistic graphene en_US
dc.type Article en_US


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