Sub-50-mV Nanoelectromechanical Switch Without Body Bias

Abstract

This brief presents a fabricated and characterized 3-terminal (3T) nanoelectromechanical switch (NEMS) featuring for the first time a sub-50-mV pull-in voltage operation without body biasing. The proposed NEMS demonstrates a low hysteresis (<; 20 mV), low turn-on delay (15 ns), and record low subthreshold slope of 2 mV/decade due to the small air gap of only 100 nm between the gate and the source beam realized using a simple and low-cost fabrication process. NEMS is a propitious candidate toward ideal switch exhibiting a zero leakage with ON-state conductance of 0.1 A.V/μm and a sub-50-mV swing providing an ultralow active power consumption.