| dc.contributor.author |
Rao, V. Ramgopal |
|
| dc.date.accessioned |
2023-10-23T06:56:35Z |
|
| dc.date.available |
2023-10-23T06:56:35Z |
|
| dc.date.issued |
2017-02 |
|
| dc.identifier.uri |
https://ieeexplore.ieee.org/document/7845592 |
|
| dc.identifier.uri |
http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12591 |
|
| dc.description.abstract |
Self-heating and thermal modeling in fin-shaped FETs (FinFETs) are studied in this brief using calibrated 3-D TCAD simulations. Using the second order R th C th network extraction, we demonstrate for the first time a simple method for the modeling of thermal resistances and capacitances for BSIMCMG compact models using small-signal ac capacitance method. We show that the extraction of thermal time constants using the second-order R th C th method is superior to the other techniques used in the literature. Using this technique, we extract the thermal time constants for FinFETs to be in the order of a few nano/pico seconds. |
en_US |
| dc.language.iso |
en |
en_US |
| dc.publisher |
IEEE |
en_US |
| dc.subject |
EEE |
en_US |
| dc.subject |
Fin-shaped FET (FinFET) |
en_US |
| dc.subject |
Self-heating effects (SHEs) |
en_US |
| dc.subject |
Silicon on insulator (SOI) |
en_US |
| dc.title |
A Novel TCAD based Thermal Extraction Approach for Nano-scale FinFETs |
en_US |
| dc.type |
Article |
en_US |