| dc.contributor.author |
Rao, V. Ramgopal |
|
| dc.date.accessioned |
2023-10-23T10:38:29Z |
|
| dc.date.available |
2023-10-23T10:38:29Z |
|
| dc.date.issued |
2016 |
|
| dc.identifier.uri |
https://ieeexplore.ieee.org/abstract/document/7433994 |
|
| dc.identifier.uri |
http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12600 |
|
| dc.description.abstract |
We integrate the first vapor phase self-assembled monolayer (VPSAM) of hydroxy-phenyl zinc porphyrin (ZnTPPOH) on the interlayer dielectric materials and investigate its properties as a copper diffusion barrier. The ZnTPPOH VPSAMs show a 1.5× improvement over the earlier investigated 3-aminopropyltrimethoxysilane self-assembled monolayers (SAMs) in bias temperature stress (BTS) studies. We show that with the porphyrin SAMs, one can achieve an improvement in breakdown field of a low-K dielectric by two times and a drop in copper diffusion by six times as measured by secondary ion mass spectroscopy. |
en_US |
| dc.language.iso |
en |
en_US |
| dc.publisher |
IEEE |
en_US |
| dc.subject |
EEE |
en_US |
| dc.subject |
Barrier layers |
en_US |
| dc.subject |
Copper diffusion |
en_US |
| dc.subject |
Copper interconnects |
en_US |
| dc.subject |
Self-assembly |
en_US |
| dc.subject |
Self-assembled monolayer (SAM) |
en_US |
| dc.title |
A Vapor Phase Self-Assembly of Porphyrin Monolayer as a Copper Diffusion Barrier for Back-End-of-Line CMOS Technologies |
en_US |
| dc.type |
Article |
en_US |